Patent Assignment Details
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Reel/Frame: | 008542/0945 | |
| Pages: | 3 |
| | Recorded: | 05/06/1997 | | |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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03/23/1999
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Application #:
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08851689
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Filing Dt:
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05/06/1997
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Title:
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METHOD FOR MAKING LOW-TOPOGRAPHY BURIED CAPACITOR BY A TWO-STAGE ETCHING PROCESS AND DEVICE MADE
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Assignee
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SCEINCE-BASED INDUSTRIAL PARK |
NO. 121 PARK AVENUE 3 |
HSIN-CHU, TAIWAN |
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Correspondence name and address
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BARNES, KISSELLE, RAISCH P.C., ET AL
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WILLIAM H. GRIFFITH
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3500 PENOBSCOT BUILDING
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645 GRISWOLD STREET
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DETROIT, MI 48226-4217
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