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Patent Assignment Details
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Reel/Frame:008570/0067   Pages: 5
Recorded: 05/21/1997
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
11/23/1999
Application #:
08859761
Filing Dt:
05/21/1997
Title:
PROCESS FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE WITH HIGH DATA RETENTION INCLUDING SILICON OXYNITRIDE ETCH STOP LAYER FORMED AT HIGH TEMPERATURE WITH LOW HYDROGEN ION CONCENTRATION
Assignors
1
Exec Dt:
05/16/1997
2
Exec Dt:
05/16/1997
3
Exec Dt:
05/14/1997
Assignee
1
P.O. BOX 3453
ONE AMD PLACE
SUNNYVALE, CALIFORNIA 94088
Correspondence name and address
BRONSON, BRONSON & MCKINNON LLP
DAVID G. ALEXANDER
444 S. FLOWER STREET
24TH FLOOR
LOS ANGELES, CALIFORNIA 90071-2925

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