Patent Assignment Details
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Reel/Frame: | 008892/0732 | |
| Pages: | 3 |
| | Recorded: | 11/12/1997 | | |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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12/22/1998
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Application #:
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08967940
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Filing Dt:
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11/12/1997
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Title:
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FLASH MEMORY CELL STRUCTURE HAVING A HIGH GATE-COUPLING COEFFICIENT AND A SELECT GATE
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Assignee
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SCIENCE-BASED INDUSTRIAL PARK |
NO. 3, LI-HSIN II RD. |
HSINCHU CITY, TAIWAN R.O.C |
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Correspondence name and address
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RABIN, CHAMPAGNE & LYNT, P.C.
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ROBERT H. BERDO, JR.
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1725 K STREET, N.W., SUITE 1111
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WASHINGTON, D.C. 20006
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