Patent Assignment Details
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| Reel/Frame: | 008960/0926 | |
| Pages: | 5 |
| | Recorded: | 01/27/1998 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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02/15/2000
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Application #:
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08978398
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Filing Dt:
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11/25/1997
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Title:
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METHOD OF FABRICATING AN OXYNITRIDE-CAPPED HIGH DIELECTRIC CONSTANT INTERPOLYSILICON DIELECTRIC STRUCTURE FOR A LOW VOLTAGE NON-VOLATILE MEMORY.
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Assignee
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| ONE AMD PLACE |
| SUNNYVALE, CALIFORNIA 94088 |
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Correspondence name and address
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FLIESLER, DUBB, MEYER & LOVEJOY
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MARTIN C. FLIESLER, ESQ.
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FOUR EMBARCADER CENTER
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SUITE 400
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SAN FRANCISCO, CA 94111
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