Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
| Reel/Frame: | 009067/0072 | |
| Pages: | 2 |
| | Recorded: | 03/19/1998 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
|
Total properties:
1
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/31/1999
|
Application #:
|
09044970
|
Filing Dt:
|
03/19/1998
|
|
Title:
|
COMBINED IN-SITU HIGH DENSITY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (HDPCVD) AND CHEMICAL MECHANICAL POLISHING (CMP) PROCESS TO FORM AN INTERMETAL DIELECTRIC LAYER WITH A STOPPER LAYER EMBEDDED THEREIN
|
|
|
Assignee
|
|
|
|
|
| NO. 2, R&D RD., VI, SCIENCE-BASED INDUSTRIAL PARK |
| HSINCHU, TAIWAN |
|
|
Correspondence name and address
|
| |
LAW OFFICE OF LIAUH AND ASSOCIATES
|
| |
W. WAYNE LIAUH
|
| |
4224 WAIALAE AVE., SUITE 5-388
|
| |
HONOLULU, HI 96816
|
Search Results as of:
05/21/2024 01:58 PM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
|
