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Patent Assignment Details
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Reel/Frame:009578/0905   Pages: 2
Recorded: 11/03/1998
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
02/27/2001
Application #:
09185110
Filing Dt:
11/03/1998
Title:
MOSGATED TRENCH TYPE POWER SEMICONDUCTOR WITH SILICON CARBIDE SUBSTRATE AND INCREASED GATE BREAKDOWN VOLTAGE AND REDUCED ON-RESISTANCE
Assignors
1
Exec Dt:
10/30/1998
2
Exec Dt:
10/30/1998
Assignee
1
233 KANSAS STREET
EL SEGUNDO, CALIFORNIA 90245
Correspondence name and address
OSTROLENK, FABER, GERB & SOFFEN, LLP
SAMUEL H. WEINER
1180 AVENUE OF THE AMERICAS
NEW YORK, NEW YORK 10036-8403

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