Patent Assignment Details
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| Reel/Frame: | 009602/0733 | |
| Pages: | 5 |
| | Recorded: | 08/10/1998 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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12/19/2000
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Application #:
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09128187
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Filing Dt:
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08/03/1998
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Title:
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METHOD OF MANUFACTURING MOS GATE UTILIZING A NITRIDATION REACTION
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Assignees
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| SCIENCE-BASED INDUSTRIAL PARK |
| 3F, NO. 19 LI-HSIN RD. |
| HSINCHU, TAIWAN |
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO. 19, LI-HSIN RD. |
| HSINCHU, TAIWAN |
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| SCIENCE-BASED INDUSTRIAL PARK |
| WITTELSBACHERPLATZ 2 |
| D-80333, MUNCHEN, GERMANY |
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Correspondence name and address
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THOMAS, KAYDEN, HORSTEMEYER ET AL
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DANIEL R. MCCLURE
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100 GALLERIA PARKWAY, SUITE 1500
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ATLANTA, GA 30339
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