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Reel/Frame:010285/0889   Pages: 6
Recorded: 01/05/1999
Conveyance: (ASSIGNMENT OF ASSIGNOR'S INTEREST) RE-RECORD TO CORRECT THE RECORDATION DATE OF 4/29/99 TO 1/5/99, PREVIOUSLY RECORDED AT REEL 9921, FRAME 0274.
Total properties: 1
1
Patent #:
Issue Dt:
05/08/2001
Application #:
09225661
Filing Dt:
01/05/1999
Title:
METHOD FOR FORMING SEMICONDUCTOR SEED LAYERS BY INERT GAS SPUTTER ETCHING
Assignors
1
Exec Dt:
12/18/1998
2
Exec Dt:
12/16/1998
3
Exec Dt:
12/14/1998
Assignee
1
P.O. BOX 3453
ONE AMD PLACE
SUNNYVALE, CALIFORNIA 94088
Correspondence name and address
THE LAW OFFICES OF MIKIO ISHIMARU
MIKIO ISHIMARU
1046 PINENUT COURT
SUNNYVALE, CA 94087

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