Patent Assignment Details
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| Reel/Frame: | 011584/0105 | |
| Pages: | 3 |
| | Recorded: | 02/28/2001 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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09/16/2003
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Application #:
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09796227
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Filing Dt:
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02/28/2001
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Publication #:
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Pub Dt:
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08/29/2002
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Title:
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METHOD OF FABRICATING A MOS CAPACITOR
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Assignee
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO. 3, LI-HSIN RD. II |
| HSINCHU, TAIWAN R.O.C |
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Correspondence name and address
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THOMAS, KAYDEN, HORSTEMEYER & RISLEY LLP
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DANIEL R. MCCLURE
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100 GALLERIA PARKWAY, SUITE 1750
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ATLANTA, GA 30339
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