Patent Assignment Details
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| Reel/Frame: | 012061/0121 | |
| Pages: | 3 |
| | Recorded: | 08/06/2001 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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03/25/2003
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Application #:
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09921893
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Filing Dt:
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08/06/2001
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Publication #:
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Pub Dt:
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04/18/2002
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Title:
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METHOD OF CHEMICALLY GROWING A THIN FILM IN A GAS PHASE ON A SILICON SEMICONDUCTOR SUBSTRATE
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Assignees
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| 5-25, NISHI-SHINJUKU 7-CHOME |
| SHINJUKU-KU, TOKYO, 163-0023, JAPAN |
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| 2-11, GINZA 4-CHOME, CHUUOU-KU |
| TOKYO, 104-0061, JAPAN |
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Correspondence name and address
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FOLEY & LARDNER
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RICHARD L. SCHWAAB
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WASHINGTON HARBOUR
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3000 K STREET, N.W., SUITE 500
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WASHINGTON, D.C. 20007-5109
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