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Patent Assignment Details
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Reel/Frame:012126/0840   Pages: 3
Recorded: 08/24/2001
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
09939458
Filing Dt:
08/24/2001
Publication #:
Pub Dt:
03/14/2002
Title:
Semiconductor device of STI structure and method of fabricating MOS transistors having consistent threshold voltages
Assignors
1
Exec Dt:
08/16/2001
2
Exec Dt:
08/16/2001
Assignee
1
MINATO-KU
7-1, SHIBA 5-CHOME
TOKYO, JAPAN
Correspondence name and address
HELFGOTT & KARAS, P.C.
SAMSON HELFGOTT
EMPIRE STATE BUILDING, 60TH FLOOR
NEW YORK, NEW YORK 10118

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