Patent Assignment Details
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| Reel/Frame: | 013139/0485 | |
| Pages: | 3 |
| | Recorded: | 10/09/2001 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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01/07/2003
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Application #:
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09971801
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Filing Dt:
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10/09/2001
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Title:
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METHOD OF PRODUCING POLYCRYSTALLINE SILICON FOR SEMICONDUCTORS FROM SILANE GAS
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Assignee
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| MINATO-KU, |
| 3-6, AKASAKA 2-CHOME, |
| TOKYO 107-8414,, JAPAN |
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Correspondence name and address
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ARMSTRONG, WESTERMAN
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HATTORI ET AL.
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1725 K STREET, N.W.
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SUITE 1000
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WASHINGTON, D.C. 20006
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