Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
| Reel/Frame: | 013207/0229 | |
| Pages: | 3 |
| | Recorded: | 10/29/2002 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
|
Total properties:
1
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/12/2005
|
Application #:
|
10210053
|
Filing Dt:
|
08/02/2002
|
|
Publication #:
|
|
Pub Dt:
|
02/20/2003
| | | | |
|
Title:
|
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A HIGH-BREAKDOWN-VOLTAGE MOS TRANSISTOR AND A LOW-BREAKDOWN-VOLTAGE MOS TRANSISTOR ARE FORMED ON AN IDENTICAL SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
|
|
|
Assignee
|
|
|
|
|
| 4-1, NISHI-SHINJUKU 2-CHOME |
| SHINJUKU-KU, TOKYO, JAPAN |
|
|
Correspondence name and address
|
| |
OLIFF & BERRIDGE, PLC
|
| |
JAMES A. OLIFF
|
| |
P. O. BOX 19928
|
| |
ALEXANDRIA, VA 22320
|
Search Results as of:
05/02/2024 12:02 AM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
|
