Patent Assignment Details
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| Reel/Frame: | 013265/0360 | |
| Pages: | 2 |
| | Recorded: | 09/03/2002 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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11/09/2004
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Application #:
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10232612
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Filing Dt:
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09/03/2002
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Publication #:
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Pub Dt:
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03/06/2003
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Title:
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INGAASP OR INGAAS SEMICONDUCTOR LASER ELEMENT IN WHICH NEAR-EDGE PORTION OF ACTIVE LAYER IS SUBSTITUTED WITH GAAS OPTICAL WAVEGUIDE LAYER HAVING GREATER BANDGAP THAN ACTIVE LAYER
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Assignee
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| 210 NAKANUMA, MINAMIASHIGARA-SHI |
| KANAGAWA-KEN, JAPAN |
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Correspondence name and address
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SUGHRUE MION, PLLC
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DARRYL MEXIC
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2100 PENN. AVE., N. W.
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STE. 880
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WASHINGTON, DC 20037-3213
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