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Reel/Frame:014387/0973   Pages: 3
Recorded: 03/01/2004
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
06/13/2006
Application #:
10659042
Filing Dt:
09/09/2003
Publication #:
Pub Dt:
03/10/2005
Title:
METHOD OF DECREASING CHARGING EFFECTS IN OXIDE-NITRIDE-OXIDE (ONO) MEMORY ARRAYS
Assignors
1
Exec Dt:
12/05/2003
2
Exec Dt:
12/10/2003
3
Exec Dt:
12/11/2003
4
Exec Dt:
12/07/2003
5
Exec Dt:
12/17/2003
6
Exec Dt:
12/19/2003
7
Exec Dt:
12/25/2003
8
Exec Dt:
12/25/2003
9
Exec Dt:
12/19/2003
Assignees
1
RAMAT GABRIEL INDUSTRIAL AREA
MIGGAL HAEMEK, ISRAEL 23105
2
1006, OAZA KADOMA, KADOMA CITY
OSAKA, 571-8506, JAPAN
Correspondence name and address
BEVER, HOFFMAN & HARMS, LLP
E. ERIC HOFFMAN, ESQ.
1432 CONCANNON BLVD., BUILDING G
LIVERMORE, CA 94550-6006

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