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Patent Assignment Details
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Reel/Frame:014754/0749   Pages: 9
Recorded: 06/22/2004
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 20
1
Patent #:
Issue Dt:
06/19/2001
Application #:
09426205
Filing Dt:
10/25/1999
Title:
PROCESS FOR FABRICATING A BIT-LINE IN A MONOS DEVICE USING A DUAL LAYER HARD MASK
2
Patent #:
Issue Dt:
04/17/2001
Application #:
09426239
Filing Dt:
10/25/1999
Title:
METHOD TO GENERATE A MONOS TYPE FLASH CELL USING POLYCRYSTALLINE SILICON AS AN ONO TOP LAYER
3
Patent #:
Issue Dt:
06/19/2001
Application #:
09426430
Filing Dt:
10/25/1999
Title:
METHOD OF FABRICATING AN ONO DIELECTRIC BY NITRIDATION FOR MNOS MEMORY CELLS
4
Patent #:
Issue Dt:
07/24/2001
Application #:
09426672
Filing Dt:
10/25/1999
Title:
HIGH TEMPERATURE OXIDE DEPOSITION PROCESS FOR FABRICATING AN ONO FLOATING-GATE ELECTRODE IN A TWO BIT EEPROM DEVICE
5
Patent #:
Issue Dt:
09/12/2000
Application #:
09427402
Filing Dt:
10/25/1999
Title:
INTEGRATED METHOD BY USING HIGH TEMPERATURE OXIDE FOR TOP OXIDE AND PERIPHERY GATE OXIDE
6
Patent #:
Issue Dt:
06/05/2001
Application #:
09427404
Filing Dt:
10/25/1999
Title:
PROCESS FOR FABRICATING A BIT-LINE USING BURIED DIFFUSION ISOLATION
7
Patent #:
Issue Dt:
12/11/2001
Application #:
09492353
Filing Dt:
01/27/2000
Title:
Two bit flash cell with two floating gate regions
8
Patent #:
Issue Dt:
11/12/2002
Application #:
09532347
Filing Dt:
03/21/2000
Title:
METHOD FOR FORMING HIGH QUALITY MULTIPLE THICKNESS OXIDE USING HIGH TEMPERATURE DESCUM
9
Patent #:
Issue Dt:
08/13/2002
Application #:
09535255
Filing Dt:
03/23/2000
Title:
METHOD FOR FORMING HIGH QUALITY MULTIPLE THICKNESS OXIDE LAYERS BY REDUCING DESCUM INDUCED DEFECTS
10
Patent #:
Issue Dt:
10/08/2002
Application #:
09535256
Filing Dt:
03/23/2000
Publication #:
Pub Dt:
05/16/2002
Title:
METHOD FOR FORMING HIGH QUALITY MULTIPLE THICKNESS OXIDE LAYERS BY REDUCING DESCUM INDUCED DEFECTS
11
Patent #:
Issue Dt:
07/09/2002
Application #:
09651684
Filing Dt:
08/30/2000
Title:
Semiconductor structure
12
Patent #:
Issue Dt:
10/15/2002
Application #:
09723635
Filing Dt:
11/28/2000
Title:
SIMULTANEOUS FORMATION OF CHARGE STORAGE AND BITLINE TO WORDLINE ISOLATION
13
Patent #:
Issue Dt:
10/22/2002
Application #:
09723653
Filing Dt:
11/28/2000
Title:
METHOD OF SIMULTANEOUS FORMATION OF BITLINE ISOLATION AND PERIPHEY OXIDE
14
Patent #:
Issue Dt:
09/03/2002
Application #:
09772600
Filing Dt:
01/30/2001
Title:
FLASH MEMORY ERASE SPEED BY FLUORINE IMPLANT OR FLUORINATION
15
Patent #:
Issue Dt:
08/20/2002
Application #:
09893279
Filing Dt:
06/27/2001
Title:
SOURCE DRAIN IMPLANT DURING ONO FORMATION FOR IMPROVED ISOLATION OF SONOS DEVICES
16
Patent #:
Issue Dt:
09/28/2004
Application #:
10136173
Filing Dt:
05/01/2002
Publication #:
Pub Dt:
11/06/2003
Title:
SYSTEM AND METHOD FOR MULTI-BIT FLASH READS USING DUAL DYNAMIC REFERENCES
17
Patent #:
Issue Dt:
05/04/2004
Application #:
10217821
Filing Dt:
08/12/2002
Title:
SALICIDED GATE FOR VIRTUAL GROUND ARRAYS
18
Patent #:
Issue Dt:
04/29/2003
Application #:
10223195
Filing Dt:
08/19/2002
Publication #:
Pub Dt:
12/19/2002
Title:
SIMULTANEOUS FORMATION OF CHARGE STORAGE AND BITLINE TO WORDLINE ISOLATION
19
Patent #:
Issue Dt:
03/16/2004
Application #:
10230729
Filing Dt:
08/29/2002
Title:
DUMMY WORDLINE FOR ERASE AND BITLINE LEAKAGE
20
Patent #:
Issue Dt:
01/29/2008
Application #:
10600065
Filing Dt:
06/20/2003
Publication #:
Pub Dt:
12/23/2004
Title:
MEMORY WITH A CORE-BASED VIRTUAL GROUND AND DYNAMIC REFERENCE SENSING SCHEME
Assignors
1
Exec Dt:
03/30/2004
2
Exec Dt:
05/14/2004
Assignee
1
ONE AMD PLACE, P.O. BOX 3453
SUNNYVALE, CALIFORNIA 94088
Correspondence name and address
GREGORY TUROCY
1900 EAST 9TH STREET
CLEVELAND, OH 44114

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