Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 014788/0211 | |
| Pages: | 2 |
| | Recorded: | 06/28/2004 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
8
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Patent #:
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Issue Dt:
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08/06/2002
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Application #:
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09812285
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Filing Dt:
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03/19/2001
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Title:
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SEQUENTIAL METHOD FOR DEPOSITING A FILM BY MODULATED ION-INDUCED ATOMIC LAYER DEPOSITION (MII-ALD)
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Patent #:
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Issue Dt:
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07/09/2002
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Application #:
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09812486
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Filing Dt:
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03/19/2001
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Title:
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CONTINUOUS METHOD FOR DEPOSITING A FILM BY MODULATED ION-INDUCED ATOMIC LAYER DEPOSITION (MII-ALD)
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Patent #:
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Issue Dt:
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04/12/2005
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Application #:
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09854092
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Filing Dt:
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05/10/2001
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Publication #:
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Pub Dt:
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06/06/2002
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Title:
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METHOD AND APPARATUS FOR IMPROVED TEMPERATURE CONTROL IN ATOMIC LAYER DEPOSITION
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Patent #:
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Issue Dt:
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10/05/2004
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Application #:
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09902080
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Filing Dt:
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07/09/2001
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Publication #:
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Pub Dt:
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06/20/2002
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Title:
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VARIABLE GAS CONDUCTANCE CONTROL FOR A PROCESS CHAMBER
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Patent #:
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Issue Dt:
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10/07/2003
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Application #:
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09999636
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Filing Dt:
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10/24/2001
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Publication #:
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Pub Dt:
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10/10/2002
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Title:
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ADSORPTION PROCESS FOR ATOMIC LAYER DEPOSITION
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Patent #:
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NONE
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Issue Dt:
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Application #:
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10000825
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Filing Dt:
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10/24/2001
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Publication #:
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Pub Dt:
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10/10/2002
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Title:
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Substrate temperature control in an ALD reactor
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Patent #:
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Issue Dt:
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03/13/2007
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Application #:
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10027592
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Filing Dt:
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12/19/2001
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Publication #:
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Pub Dt:
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06/20/2002
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Title:
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VARYING CONDUCTANCE OUT OF A PROCESS REGION TO CONTROL GAS FLUX IN AN ALD REACTOR
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Patent #:
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Issue Dt:
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05/27/2003
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Application #:
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10137851
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Filing Dt:
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05/03/2002
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Publication #:
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Pub Dt:
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11/07/2002
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Title:
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SEQUENTIAL METHOD FOR DEPOSITING A FILM BY MODULATED ION-INDUCED ATOMIC LAYER DEPOSITION (MII-ALD)
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Assignee
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| 4000 NORTH FIRST STREET |
| SAN JOSE, CALIFORNIA 95134 |
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Correspondence name and address
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PATENT LAW GROUP LLP
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BRIAN D. OGONOWSKY
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2635 NORTH FIRST STREET
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SUITE 223
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SAN JOSE, CA 95134
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