|
Total properties:
27
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/08/1990
|
Application #:
|
07248651
|
Filing Dt:
|
09/26/1988
|
|
Title:
|
CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/09/1991
|
Application #:
|
07607568
|
Filing Dt:
|
11/01/1990
|
|
Title:
|
METHOD OF MAKING SINGLE CRYSTAL SEMICONDUCTOR SUBSTRATE ARTICLES AND SEMICONDUCTOR DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/21/1997
|
Application #:
|
08188469
|
Filing Dt:
|
01/27/1994
|
|
Title:
|
A METHOD OF MAKING A SINGLE CRYSTALS GA*N ARTICLE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/15/1995
|
Application #:
|
08253969
|
Filing Dt:
|
06/03/1994
|
|
Title:
|
LOW RESISTANCE, STABLE OHMIC CONTACTS TO SILCON CARBIDE, AND METHOD OF MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/17/1996
|
Application #:
|
08383425
|
Filing Dt:
|
02/03/1995
|
|
Title:
|
HIGH BRIGHTNESS ELECTROLUMINESCENT DEVICE, EMITTING IN THE GREEN TO ULTRAVIOLET SPECTRUM, AND METHOD OF MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/09/1999
|
Application #:
|
08447631
|
Filing Dt:
|
05/23/1995
|
|
Title:
|
LOW RESISTANCE, STABLE OHMIC CONTACTS TO SILCON CARBIDE, AND METHOD OF MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/26/1997
|
Application #:
|
08448743
|
Filing Dt:
|
05/24/1995
|
|
Title:
|
HIGH BRIGHTNESS ELECTROLUMINESCENT DEVICE EMITTING IN THE GREEN TO ULTRAVIOLET SPECTRUM AND METHOD OF MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/29/2003
|
Application #:
|
08621937
|
Filing Dt:
|
03/26/1996
|
|
Title:
|
SOLID STATE WHITE LIGHT EMITTER AND DISPLAY USING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/23/1999
|
Application #:
|
08894609
|
Filing Dt:
|
11/24/1997
|
|
Title:
|
HIGH BRIGHTNESS ELECTROLUMINESCENT DEVICE EMITTING IN THE GREEN TO ULTRAVIOLET SPECTRUM AND METHOD OF MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/05/2000
|
Application #:
|
08984473
|
Filing Dt:
|
12/03/1997
|
|
Title:
|
GAN-BASED DEVICES USING (GA, AL, IN)N BASE LAYERS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/27/2002
|
Application #:
|
09179049
|
Filing Dt:
|
10/26/1998
|
|
Title:
|
LOW DEFECT DENSITY (GA, AL, IN)N AND HVPE PROCESS FOR MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/11/2001
|
Application #:
|
09339510
|
Filing Dt:
|
06/24/1999
|
|
Title:
|
SILICON CARBIDE EPITAXIAL LAYERS GROWN ON SUBSTRATES OFFCUT TOWARDS <1100>
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/22/2003
|
Application #:
|
09524062
|
Filing Dt:
|
03/13/2000
|
|
Title:
|
III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/10/2002
|
Application #:
|
09605195
|
Filing Dt:
|
06/28/2000
|
|
Title:
|
METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/18/2003
|
Application #:
|
09656595
|
Filing Dt:
|
09/07/2000
|
|
Title:
|
GAN-BASED DEVICES USING THICK (GA, AL, IN)N BASE LAYERS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/03/2002
|
Application #:
|
09877437
|
Filing Dt:
|
06/08/2001
|
|
Publication #:
|
|
Pub Dt:
|
12/12/2002
| | | | |
|
Title:
|
HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/06/2005
|
Application #:
|
09929789
|
Filing Dt:
|
08/14/2001
|
|
Publication #:
|
|
Pub Dt:
|
03/07/2002
| | | | |
|
Title:
|
BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/20/2004
|
Application #:
|
09933943
|
Filing Dt:
|
08/21/2001
|
|
Publication #:
|
|
Pub Dt:
|
12/27/2001
| | | | |
|
Title:
|
BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/25/2005
|
Application #:
|
09947253
|
Filing Dt:
|
09/05/2001
|
|
Publication #:
|
|
Pub Dt:
|
06/06/2002
| | | | |
|
Title:
|
FREE-STANDING (AL, GA, IN)N AND PARTING METHOD FOR FORMING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/04/2003
|
Application #:
|
10001476
|
Filing Dt:
|
11/01/2001
|
|
Publication #:
|
|
Pub Dt:
|
05/23/2002
| | | | |
|
Title:
|
SILICON CARBIDE EPITAXIAL LAYERS GROWN ON SUBSTRATES OFFCUT TOWARDS <1100>
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/13/2005
|
Application #:
|
10103226
|
Filing Dt:
|
03/21/2002
|
|
Publication #:
|
|
Pub Dt:
|
11/14/2002
| | | | |
|
Title:
|
LOW DEFECT DENSITY (GA, AL, IN) N AND HVPE PROCESS FOR MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/05/2011
|
Application #:
|
10107001
|
Filing Dt:
|
03/25/2002
|
|
Publication #:
|
|
Pub Dt:
|
09/25/2003
| | | | |
|
Title:
|
DOPED GROUP III-V NITRIDE MATERIALS, AND MICROELECTRONIC DEVICES AND DEVICE PRECURSOR STRUCTURES COMPRISING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/04/2005
|
Application #:
|
10272761
|
Filing Dt:
|
10/17/2002
|
|
Publication #:
|
|
Pub Dt:
|
07/10/2003
| | | | |
|
Title:
|
HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/29/2006
|
Application #:
|
10328223
|
Filing Dt:
|
12/23/2002
|
|
Publication #:
|
|
Pub Dt:
|
01/08/2004
| | | | |
|
Title:
|
GAN BOULE GROWN FROM LIQUID MELT USING GAN SEED WAFERS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/02/2010
|
Application #:
|
10369846
|
Filing Dt:
|
02/19/2003
|
|
Publication #:
|
|
Pub Dt:
|
08/21/2003
| | | | |
|
Title:
|
III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/14/2010
|
Application #:
|
10513009
|
Filing Dt:
|
10/27/2004
|
|
Publication #:
|
|
Pub Dt:
|
08/04/2005
| | |
PCT #:
|
US0313162
|
|
Title:
|
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/10/2009
|
Application #:
|
10623198
|
Filing Dt:
|
07/18/2003
|
|
Publication #:
|
|
Pub Dt:
|
01/29/2004
| | | | |
|
Title:
|
SOLID STATE WHITE LIGHT EMITTER AND DISPLAY USING SAME
|
|
