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Patent Assignment Details
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Reel/Frame:015468/0274   Pages: 2
Recorded: 12/15/2004
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
10925966
Filing Dt:
08/26/2004
Publication #:
Pub Dt:
04/28/2005
Title:
Method for fabricating a silicon nanocrystal, silicon nanocrystal, method for fabricating a floating gate type memory capacitor structure, and floating gate type memory capacitor structure
Assignors
1
Exec Dt:
09/30/2004
2
Exec Dt:
10/03/2004
3
Exec Dt:
09/30/2004
4
Exec Dt:
09/29/2004
5
Exec Dt:
09/30/2004
6
Exec Dt:
09/30/2004
7
Exec Dt:
10/04/2004
Assignee
1
1, FURO-CHO, CHIKUSA-KU
NAGOYA CITY, AICHI PREF.,, JAPAN
Correspondence name and address
OLIFF & BERRIDGE, PLC
JAMES A. OLIFF
P.O. BOX 19928
ALEXANDRIA, VA 22320

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