Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 015631/0789 | |
| Pages: | 9 |
| | Recorded: | 07/30/2004 | | |
| Attorney Dkt #: | CS01-017/18 |
| Conveyance: | CORRECTED ASSIGNMENT TO CORRECT THE NAME OF THE SIXTH INVENTOR. PREVIOUSLY RECORDED ON REEL 013647 FRAME 0813 |
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Total properties:
1
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Patent #:
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Issue Dt:
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01/11/2005
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Application #:
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10338156
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Filing Dt:
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01/08/2003
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Publication #:
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Pub Dt:
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07/08/2004
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Title:
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METHOD TO PRODUCE DUAL GATES (ONE METAL AND ONE POLY OR METAL SILICIDE) FOR CMOS DEVICES USING SPUTTERED METAL DEPOSITION, METALLIC ION IMPLANTATION, OR SILICON IMPLANTATION, AND LASER ANNEALING
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Assignee
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| STREET 2 |
| 60 WOODLANDS INDUSTRIAL PARK D. |
| SINGAPORE, SINGAPORE 738406 |
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Correspondence name and address
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GEORGE O. SAILE
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28 DAVIS AVENUE
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POOUGHKEEPSIE, NY 12603
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