Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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Reel/Frame: | 015654/0230 | |
| Pages: | 4 |
| | Recorded: | 02/07/2005 | | |
Conveyance: | CORRECTIVE ASSIGNMENT TO CORRECT THE NAME OF THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 015609 FRAME 0803. ASSIGNOR(S) HEREBY CONFIRMS THE THE JAPAN SCIENCE AND TECHNOLOGY CENTER SHOULD READ --JAPAN SCIENCE AND TECHNOLOGY AGENCY--. |
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Total properties:
1
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Patent #:
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Issue Dt:
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09/23/2008
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Application #:
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10537385
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Filing Dt:
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06/03/2005
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Publication #:
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Pub Dt:
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01/12/2006
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PCT #:
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US0321916
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Title:
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GROWTH OF PLANAR, NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY
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Assignee
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4-1-8, HONCHO, KAWAGUCHI CITY |
SAITAMA PREFECTURE, JAPAN 332-0012 |
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Correspondence name and address
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GEORGE H. GATES
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6701 CENTER DRIVE WEST, SUITE 1050
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LOS ANGELES, CA 90045
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