Patent Assignment Details
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Reel/Frame: | 016667/0542 | |
| Pages: | 2 |
| | Recorded: | 10/20/2005 | | |
Attorney Dkt #: | 30794.129WO01 |
Conveyance: | ASSIGNMENT OF 50% INTEREST |
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Total properties:
1
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Patent #:
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Issue Dt:
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04/29/2014
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Application #:
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11921396
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Filing Dt:
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11/30/2007
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PCT #:
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US0524239
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Title:
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Method for Growing Group III-Nitride Crystals in Supercritical Ammonia Using an Autoclave
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Assignee
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4-1-8, HONCHO, KAWAGUCHI CITY |
SAITAMA PREFECTURE, JAPAN 332-0012 |
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Correspondence name and address
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GEORGE H. GATES
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6701 CENTER DRIVE WEST, SUITE 1050
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LOS ANGELES, CA 90045
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