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Reel/Frame:016667/0542   Pages: 2
Recorded: 10/20/2005
Attorney Dkt #:30794.129WO01
Conveyance: ASSIGNMENT OF 50% INTEREST
Total properties: 1
1
Patent #:
Issue Dt:
04/29/2014
Application #:
11921396
Filing Dt:
11/30/2007
PCT #:
US0524239
Title:
Method for Growing Group III-Nitride Crystals in Supercritical Ammonia Using an Autoclave
Assignor
1
Exec Dt:
10/17/2005
Assignee
1
4-1-8, HONCHO, KAWAGUCHI CITY
SAITAMA PREFECTURE, JAPAN 332-0012
Correspondence name and address
GEORGE H. GATES
6701 CENTER DRIVE WEST, SUITE 1050
LOS ANGELES, CA 90045

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