Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
| Reel/Frame: | 016722/0712 | |
| Pages: | 4 |
| | Recorded: | 11/04/2005 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
|
Total properties:
5
|
|
|
|
Patent #:
|
|
Issue Dt:
|
06/03/2003
|
Application #:
|
09762487
|
Filing Dt:
|
02/07/2001
|
|
Title:
|
REDUCED DARK CURRENT PIN PHOTO DIODES USING INTENTIONAL DOPING
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/03/2002
|
Application #:
|
09763422
|
Filing Dt:
|
02/20/2001
|
|
Title:
|
EPITAXIALLY GROWN P-TYPE DIFFUSION SOURCE FOR PHOTODIODE FABRICATION
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/29/2003
|
Application #:
|
09863836
|
Filing Dt:
|
05/23/2001
|
|
Publication #:
|
|
Pub Dt:
|
01/31/2002
| | | | |
|
Title:
|
METHOD FOR COMBINED FABRICATION OF INDIUM GALLIUM ARSENIDE / INDIUM PHOSPHIDE AVALANCHE PHOTODIODES AND P-I-N PHOTODIODES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/11/2003
|
Application #:
|
09992965
|
Filing Dt:
|
11/14/2001
|
|
Publication #:
|
|
Pub Dt:
|
12/19/2002
| | | | |
|
Title:
|
METHOD OF FABRICATING LOW DARK CURRENT PHOTODIODE ARRAYS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
06/01/2004
|
Application #:
|
10395333
|
Filing Dt:
|
03/24/2003
|
|
Publication #:
|
|
Pub Dt:
|
10/02/2003
| | | | |
|
Title:
|
METHOD FOR COMBINED FABRICATION OF INDIUM GALLIUM ARSENIDE / INDIUM PHOSPHIDE AVALANCHE PHOTODIODES AND P-I-N PHOTODIODES
|
|
|
Assignee
|
|
|
|
|
| 3490 US ROUTE 1, BLDG. 12 |
| PRINCETON, NEW JERSEY 08540 |
|
|
Correspondence name and address
|
| |
J. CLINTON WIMBISH
|
| |
1001 WEST FOURTH STREET
|
| |
WINSTON-SALEM, NC 27101
|
Search Results as of:
05/11/2024 12:10 PM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
| 
