Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 016793/0061 | |
| Pages: | 5 |
| | Recorded: | 07/21/2005 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
8
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Patent #:
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Issue Dt:
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05/29/1990
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Application #:
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07421680
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Filing Dt:
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10/16/1989
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Title:
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METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTALS AND METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR DEVICES
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Patent #:
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Issue Dt:
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10/19/1993
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Application #:
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07943686
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Filing Dt:
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09/11/1992
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Title:
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SEMI-INSULATING INP SINGLE CRYSTALS, SEMICONDUCTOR DEVICES HAVING SUBSTRATES OF THE CRYSTALS AND PROCESSES FOR PRODUCING THE SAME
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Patent #:
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Issue Dt:
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07/18/1995
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Application #:
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08051335
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Filing Dt:
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04/23/1993
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Title:
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SUBSTRATE FOR EPITAXY AND EPITAXY USING THE SUBSTRATE
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Patent #:
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Issue Dt:
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02/18/1997
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Application #:
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08535098
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Filing Dt:
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10/18/1995
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Title:
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METHOD FOR GROWING SINGLE CRYSTAL
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Patent #:
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Issue Dt:
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02/10/1998
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Application #:
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08557095
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Filing Dt:
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12/06/1995
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Title:
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GROWING METHOD OF GALLIUM NITRIDE RELATED COMPOUND SEMICONDUCTOR CRYSTAL AND GALLIUM NITRIDE RELATED COMPOUND SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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02/16/1999
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Application #:
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08669493
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Filing Dt:
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07/11/1996
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Title:
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A METHOD OF GROWING A BULK CRYSTAL
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Patent #:
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Issue Dt:
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05/02/2000
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Application #:
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08823684
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Filing Dt:
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03/25/1997
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Title:
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PROCESS FOR PRODUCING SEMI-INSULATING INP SINGLE CRYSTAL AND SEMI-INSULATING INP SINGLE CRYSTAL SUBSTRATE
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Patent #:
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Issue Dt:
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10/09/2001
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Application #:
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09462268
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Filing Dt:
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01/06/2000
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Title:
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CDTE CRYSTAL OR CDZNTE CRYSTAL AND METHOD FOR PREPARING THE SAME
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Assignee
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| 10-1 TORANOMON 2-CHOME |
| MINATO-KU, TOKYO 105-0001, JAPAN |
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Correspondence name and address
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BIRCH, STEWART, KOLASCH & BIRCH, LLP
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P.O. BOX 747
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FALLS CHURCH, VA 22040-0747
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