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Patent Assignment Details
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Reel/Frame:017524/0455   Pages: 3
Recorded: 02/03/2006
Attorney Dkt #:02887.0365
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
11266241
Filing Dt:
11/04/2005
Publication #:
Pub Dt:
10/12/2006
Title:
Method of forming self-aligned fully silicided gate and silicided source and drain
Assignor
1
Exec Dt:
01/17/2006
Assignee
1
1-1, SHIBAURA 1-CHOME
MINATO-KU
TOKYO, JAPAN
Correspondence name and address
ERNEST F. CHAPMAN
FINNEGAN, HEDERSON, FARABOW ET AL.
901 NEW YORK AVENUE, NW
WASHINGTON, D.C. 20001-4413

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