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Reel/Frame:017638/0503   Pages: 27
Recorded: 05/18/2006
Attorney Dkt #:SC14327ZP
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
11303776
Filing Dt:
12/16/2005
Publication #:
Pub Dt:
06/21/2007
Title:
Method of fabricating reduced subthreshold leakage current submicron NFET's with high III/V ratio material
Assignors
1
Exec Dt:
03/14/2006
2
Exec Dt:
03/14/2006
3
Exec Dt:
03/14/2006
4
Exec Dt:
03/19/2006
5
Exec Dt:
03/20/2006
6
Exec Dt:
03/20/2006
Assignee
1
6501 WILLIAM CANNON DRIVE WEST
LAW DEPARTMENT
AUSTIN, TEXAS 78735
Correspondence name and address
FREESCALE SEMICONDUCTOR, INC.
7700 WEST PARMER LANE
MD: TX32.PL02
AUSTIN, TX 78729

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