Patent Assignment Details
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| Reel/Frame: | 017736/0570 | |
| Pages: | 3 |
| | Recorded: | 03/30/2006 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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10/25/2011
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Application #:
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11392516
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Filing Dt:
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03/30/2006
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Publication #:
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Pub Dt:
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10/05/2006
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Title:
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"GAN-BASED HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH AN EMBEDDED GATE ELECTRODE HAVING A FIRST RECESS PORTION AND A SECOND RECESS PORTION TO IMPROVE DRAIN BREAKDOWN VOLTAGE."
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Assignee
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| 1000, OAZA KAMISUKIAWARA, SHOWA-CHO |
| NAKAKOMA-GUN |
| YAMANASHI 409-3883, JAPAN |
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Correspondence name and address
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WESTERMAN, HATTORI, DANIELS & ADRIAN, LL
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1250 CONNECTICUT AVENUE, NW
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SUITE 700
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WASHINGTON, DC 20036
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