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Reel/Frame:018343/0757   Pages: 3
Recorded: 09/26/2006
Attorney Dkt #:06USFP1386-K.N.
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
08/18/2009
Application #:
11526577
Filing Dt:
09/26/2006
Publication #:
Pub Dt:
03/29/2007
Title:
SEMICONDUCTOR INTEGRATED CIRCUIT FOR REDUCING LEAK CURRENT THROUGH MOS TRANSISTORS
Assignor
1
Exec Dt:
09/21/2006
Assignee
1
1753 SHIMONUMABE, NAKAHARA-KU
KAWASAKI, KANAGAWA, JAPAN 211-8668
Correspondence name and address
SEAN M. MCGINN, ESQ.
MCGINN INTELLECTUAL PROP. LAW GROUP,PLLC
8321 OLD COURTHOUSE ROAD
SUITE 200
VIENNA, VA 22182-3817

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