Patent Assignment Details
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| Reel/Frame: | 018532/0769 | |
| Pages: | 2 |
| | Recorded: | 10/16/2006 | | |
| Attorney Dkt #: | 03284.0062 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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12/25/2012
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Application #:
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11580978
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Filing Dt:
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10/16/2006
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Publication #:
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Pub Dt:
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02/08/2007
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Title:
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METHOD OF PRODUCING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR SUBSTRATE OBTAINED THEREBY AND SILICON CARBIDE SEMICONDUCTOR USING THE SAME
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Assignees
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| 1, TOYOTA-CHO, TOYOTA-SHI |
| AICHI-KEN, JAPAN 471-8571 |
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| 2-4-1, MUTSUNO, ATSUTA-KU |
| NAGOYA, JAPAN 456,8587 |
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Correspondence name and address
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FINNEGAN, HENDERSON, FARABOW,
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GARRETT & DUNNER, LLP
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901 NEW YORK AVENUE, NW
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WASHINGTON, DC 20001-4413
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