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Reel/Frame:018745/0464   Pages: 2
Recorded: 12/26/2006
Attorney Dkt #:10024.0051-00000
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
01/12/2010
Application #:
11644890
Filing Dt:
12/26/2006
Publication #:
Pub Dt:
07/05/2007
Title:
METHOD FOR FORMING A DUAL INTERLAYER DIELECTRIC LAYER OF A SEMICONDUCTOR DEVICE
Assignor
1
Exec Dt:
12/26/2006
Assignee
1
891-10, DAECHI-DONG, GANGNAM-GU
SEOUL, KOREA, REPUBLIC OF 135-280
Correspondence name and address
FINNEGAN, HENDERSON, FARABOW, GARRETT
& DUNNER, L.L.P.
901 NEW YORK AVENUE, NW
WASHINGTON, DC 20001-4413

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