Patent Assignment Details
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| Reel/Frame: | 018819/0967 | |
| Pages: | 5 |
| | Recorded: | 01/29/2007 | | |
| Attorney Dkt #: | NAUP0837USA |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11668443
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Filing Dt:
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01/29/2007
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Publication #:
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Pub Dt:
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07/31/2008
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Title:
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METHOD OF FABRICATING A STRAINED SILICON CHANNEL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TRANSISTOR AND STRUCTURE THEREOF
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Assignee
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| NO.3, LI-HSIN ROAD 2, SCIENCE-BASED INDUSTRIAL PARK |
| HSIN-CHU CITY, TAIWAN |
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Correspondence name and address
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WINSTON HSU
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P.O.BOX 506
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MERRIFIELD, VA 22116
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