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Reel/Frame:018980/0719   Pages: 5
Recorded: 03/08/2007
Attorney Dkt #:05-1104-A
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
11643235
Filing Dt:
12/21/2006
Publication #:
Pub Dt:
02/11/2010
Title:
Method for forming silicon germanium layers at low temperatures, layers formed therewith and structures comprising such layers
Assignors
1
Exec Dt:
02/27/2007
2
Exec Dt:
02/23/2007
Assignees
1
KAPELDREEF 75
LEUVEN, BELGIUM 3001
2
113 KASR EL AINI STREET
CAIRO, EGYPT 11511
Correspondence name and address
MCDONNELL BOEHNEN HULBERT & BERGHOFF LLP
300 SOUTH WACKER DRIVE
JOHN G. TOLOMEI
CHICAGO, IL 60606

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