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Reel/Frame:019146/0087   Pages: 5
Recorded: 04/11/2007
Attorney Dkt #:47408-20026.00
Conveyance: CORRECTIVE ASSIGNMENT TO CORRECT THE NAME OF THE ASSIGNEE. PREVIOUSLY RECORDED ON REEL 015744 FRAME 0619. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNEE NAME SHOULD APPEAR AS SUMITOMO MITSUBISHI SILICON CORPORATION..
Total properties: 1
1
Patent #:
Issue Dt:
05/22/2007
Application #:
10828555
Filing Dt:
04/21/2004
Publication #:
Pub Dt:
01/06/2005
Title:
MANUFACTURING METHOD OF HIGH RESISTIVITY SILICON SINGLE CRYSTAL
Assignors
1
Exec Dt:
08/12/2004
2
Exec Dt:
08/12/2004
3
Exec Dt:
08/12/2004
4
Exec Dt:
08/16/2004
5
Exec Dt:
08/16/2004
Assignee
1
2-1, SHIBAURA 1-CHOME
MINATO-KU, TOKYO, JAPAN 105-0023
Correspondence name and address
BARRY E. BRETSCHNEIDER
1650 TYSONS BLVD.
SUITE 400
MCLEAN, VA 22102

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