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Reel/Frame:019837/0431   Pages: 3
Recorded: 09/05/2007
Attorney Dkt #:jeon3007/em
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
11896660
Filing Dt:
09/05/2007
Publication #:
Pub Dt:
07/31/2008
Title:
T-gate forming method and metamorphic high electron mobility transistor fabricating method using the same
Assignors
1
Exec Dt:
08/01/2007
2
Exec Dt:
08/01/2007
3
Exec Dt:
08/01/2007
4
Exec Dt:
08/01/2007
Assignee
1
SAN 31, HYOJA-DONG, NAM-GU
POHANG-SHI
KYUNGSANGBUK-DO, KOREA, REPUBLIC OF
Correspondence name and address
BACON & THOMAS, PLLC
625 SLATERS LANE
FOURTH FLOOR
ALEXANDRIA, VA 22314

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