Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 019891/0346 | |
| Pages: | 7 |
| | Recorded: | 09/27/2007 | | |
| Attorney Dkt #: | 070456-0155 |
| Conveyance: | CORRECTIVE ASSIGNMENT TO CORRECT THE ADDRESS OF THE SECOND ASSIGNEE PREVIOUSLY RECORDED ON REEL 018439 FRAME 0638. ASSIGNOR(S) HEREBY CONFIRMS THE SECOND ASSIGNEE ADDRESS SHOULD BE: 8-16-9, KISAICHI, KATANO-SHI, OSAKA 576-0033 JAPAN. |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11578242
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Filing Dt:
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08/30/2007
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Publication #:
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Pub Dt:
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12/27/2007
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Title:
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Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device
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Assignees
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| 5-33, KITAHAMA 4-CHOME, CHUO-KU |
| OSAKA-SHI |
| OSAKA 541-0041, JAPAN |
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| 8-16-9, KISAICHI, KATANO-SHI, |
| OSAKA 576-0033, JAPAN |
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Correspondence name and address
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WASHINGTON IP DOCKET
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600 THIRTEENTH STREET, N.W.
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WASHINGTON, DC 20005
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