Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 020124/0868 | |
| Pages: | 3 |
| | Recorded: | 10/31/2007 | | |
| Attorney Dkt #: | 070456-0216 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11919705
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Filing Dt:
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10/31/2007
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Publication #:
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Pub Dt:
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02/05/2009
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Title:
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Method for Producing GaxIn1-xN(0<x<1) Crystal Gaxin1-xN(0<x<1) Crystalline Substrate, Method for Producing GaN Crystal, GaN Crystalline Substrate, and Product
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Assignee
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| 5-33, KITAHAMA 4-CHOME, CHUO-KU |
| OSAKA-SHI, OSAKA 541-0041, JAPAN |
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Correspondence name and address
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MCDERMOTT WILL & EMERY LLP
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600 13TH STREET, N.W.
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WASHINGTON, D.C. 20005-3096
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