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Reel/Frame:021045/0519   Pages: 4
Recorded: 06/04/2008
Attorney Dkt #:LTP06-1010US
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
03/08/2011
Application #:
12067690
Filing Dt:
03/21/2008
Publication #:
Pub Dt:
09/04/2008
Title:
METHOD FOR FABRICATING HIGH-QUALITY SEMICONDUCTOR LIGHT-EMITTING DEVICES ON SILICON SUBSTRATES
Assignors
1
Exec Dt:
03/07/2008
2
Exec Dt:
03/07/2008
3
Exec Dt:
03/07/2008
4
Exec Dt:
03/07/2008
Assignee
1
NO. 235 EAST NANJING ROAD
INSTITUTE OF MATERIAL SCIENCE, NORTH AREA OF NANCHANG UNIVERSITY
NANCHANG, JIANGXI PROVINCE, CHINA 330047
Correspondence name and address
EDWARD J. GRUNDLER
PARK, VAUGHAN & FLEMING, LLP
2820 FIFTH STREET
DAVIS, CA 95618

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