Patent Assignment Details
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Reel/Frame: | 021902/0162 | |
| Pages: | 3 |
| | Recorded: | 11/26/2008 | | |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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06/13/2017
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Application #:
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12302319
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Filing Dt:
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11/25/2008
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Publication #:
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Pub Dt:
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09/17/2009
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Title:
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Target formed of Sintering-Resistant Material of High-Melting Point Metal Alloy, High-Melting Point Metal Silicide, High-Melting Point Metal Carbide, High-Melting Point Metal Nitride, or High-Melting Point Metal Boride, Process for Producing the Target, Assembly of the Sputtering Target-Backing Plate, and Process for Producing the Same
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Assignee
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10-1, TORANOMON 2-CHOME |
MINATO-KU, TOKYO, JAPAN 105-0001 |
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Correspondence name and address
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HOWSON & HOWSON LLP
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SUITE 210
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501 OFFICE CENTER DRIVE
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FT.WASHINGTON, PA 19034
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