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10/15/1991
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08/30/1991
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04/13/1994
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12/16/1997
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08/15/2000
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12/10/1998
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03/21/2002
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07/24/2007
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10631858
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Filing Dt:
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08/01/2003
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02/12/2004
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Title:
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DIELECTRIC DEVICE HAVING DIELECTRIC FILM TERMINATED BY HALOGEN ATOMS
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12/13/2005
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10721252
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11/26/2003
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06/03/2004
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Title:
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MEMORY DEVICE COMPRISING HYSTERETIC CAPACITANCE MEANS
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05/31/2005
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10768018
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02/02/2004
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08/05/2004
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Title:
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FERROELECTRIC MEMORY
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03/21/2006
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10792926
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03/05/2004
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09/09/2004
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Title:
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MEMORY
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12/20/2005
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10802786
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03/18/2004
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09/30/2004
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Title:
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MEMORY DEVICE HAVING STORAGE PORT AND THIN-FILM PORT
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08/12/2008
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10874168
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06/24/2004
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09/20/2007
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Title:
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MEMORY HAVING STORAGE MEANS
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08/29/2006
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10879756
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06/30/2004
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01/06/2005
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NONE
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10932081
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09/02/2004
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03/10/2005
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Semiconductor memory device
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09/19/2006
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10935554
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09/08/2004
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03/17/2005
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MEMORY
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09/02/2008
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10936593
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09/09/2004
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03/31/2005
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MEMORY
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11/07/2006
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10947367
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09/23/2004
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04/07/2005
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SEMICONDUCTOR MEMORY DEVICE
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07/31/2007
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11024688
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12/30/2004
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07/14/2005
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MEMORY
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01/15/2008
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11090660
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03/28/2005
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09/29/2005
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MEMORY
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07/17/2007
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11228215
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09/19/2005
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03/30/2006
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MEMORY
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08/28/2007
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11229763
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09/20/2005
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03/30/2006
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MEMORY
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11/20/2007
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11260243
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10/28/2005
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03/23/2006
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04/29/2008
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11328223
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01/10/2006
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07/27/2006
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MEMORY
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09/22/2009
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11353089
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02/14/2006
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08/17/2006
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MEMORY
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09/09/2008
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11473083
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06/23/2006
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12/28/2006
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MEMORY
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04/22/2008
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11494748
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07/28/2006
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02/01/2007
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MEMORY
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04/26/2011
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11509057
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08/24/2006
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03/01/2007
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MEMORY DEVICE CONFIGURED TO REFRESH MEMORY CELLS IN A POWER-DOWN STATE
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05/27/2008
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11524273
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09/21/2006
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03/29/2007
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MEMORY WITH A REFRESH PORTION FOR REWRITING DATA
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10/21/2008
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11584491
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10/23/2006
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05/31/2007
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MEMORY
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01/26/2010
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11630851
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12/22/2006
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10/11/2007
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FERROELECTRIC MEMORY HAVING A REFRESH CONTROL CIRCUIT CAPABLE OF RECOVERING RESIDUAL POLARIZATION OF UNSELECTED MEMORY CELLS
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12/02/2008
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01/23/2007
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08/09/2007
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MEMORY HAVING COUNT DETECTION CIRCUITRY FOR DETECTING ACCESS FREQUENCY
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08/03/2010
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03/27/2007
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09/27/2007
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MEMORY HAVING CIRCUITRY TO DIRECTLY CHANGE VOLTAGES APPLIED TO BIT LINES AND WORD LINES IN RESPONSE TO TRANSITIONS BETWEEN A READ OPERATION, FIRST REWRITE OPERATION, AND SECOND REWRITE OPERATION
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11/01/2007
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FERROELECTRIC MEMORY WITH AMPLIFICATION BETWEEN SUB BIT-LINE AND MAIN BIT-LINE
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07/07/2009
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11739754
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11/01/2007
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07/21/2009
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06/08/2007
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12/27/2007
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MEMORY
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04/14/2009
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12/27/2007
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MEMORY AND CONTROL UNIT
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