Patent Assignment Details
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| Reel/Frame: | 022275/0885 | |
| Pages: | 6 |
| | Recorded: | 02/18/2009 | | |
| Attorney Dkt #: | TOWER SEMICON CORRECTIVEA |
| Conveyance: | CORRECTIVE ASSIGNMENT TO CORRECT THE WRONG 2ND ASSIGNEE NAME "MATSUSHITA ELECTRONIC COMPONENTS CO., LTD." PREVIOUSLY RECORDED ON REEL 014387 FRAME 0973. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT 2ND ASSIGNEE NAME IS "MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.". |
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Total properties:
1
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Patent #:
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Issue Dt:
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06/13/2006
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Application #:
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10659042
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Filing Dt:
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09/09/2003
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Publication #:
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Pub Dt:
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03/10/2005
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Title:
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METHOD OF DECREASING CHARGING EFFECTS IN OXIDE-NITRIDE-OXIDE (ONO) MEMORY ARRAYS
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Assignees
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| RAMAT GABRIEL INDUSTRIAL AREA |
| MIGDAL HAEMEK, ISRAEL 23105 |
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| 1006, OAZA KADOMA, KADOMA CITY |
| OSAKA, JAPAN 571-8506 |
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Correspondence name and address
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KENJI KAMATA
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1130 CONNECTICUT AVE., N.W., SUITE 1100
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PANASONIC PATENT CENTER
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WASHINGTON, DC 20036
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