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Reel/Frame:022948/0835   Pages: 10
Recorded: 07/14/2009
Attorney Dkt #:NAUP1080USA
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
05/22/2012
Application #:
12502239
Filing Dt:
07/14/2009
Publication #:
Pub Dt:
01/20/2011
Title:
METHOD OF FABRICATING TRANSISTORS AND A TRANSISTOR STRUCTURE FOR IMPROVING SHORT CHANNEL EFFECT AND DRAIN INDUCED BARRIER LOWERING
Assignors
1
Exec Dt:
07/08/2009
2
Exec Dt:
07/08/2009
3
Exec Dt:
07/08/2009
4
Exec Dt:
07/08/2009
5
Exec Dt:
07/08/2009
6
Exec Dt:
07/08/2009
7
Exec Dt:
07/08/2009
Assignee
1
NO.3, LI-HSIN ROAD 2, SCIENCE-BASED INDUSTRIAL PARK
HSIN-CHU CITY, TAIWAN
Correspondence name and address
WINSTON HSU
P.O.BOX 506
MERRIFIELD, VA 22116

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