Patent Assignment Details
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| Reel/Frame: | 023442/0569 | |
| Pages: | 3 |
| | Recorded: | 10/26/2009 | | |
| Attorney Dkt #: | 430.0194USU |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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01/13/2015
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Application #:
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12554369
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Filing Dt:
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09/04/2009
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Publication #:
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Pub Dt:
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04/01/2010
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Title:
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METHOD FOR FORMING GATE OXIDE FILM OF SIC SEMICONDUCTOR DEVICE USING TWO STEP OXIDATION PROCESS
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Assignee
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| 1-1, SHIBAURA 1-CHOME |
| MINATO-KU, TOKYO 105-8001, JAPAN |
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Correspondence name and address
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CHARLES N.J. RUGGIERO, ESQ.
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OHLANDT, GREELEY, RUGGIERO & PERLE, LLP
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ONE LANDMARK SQUARE, 10TH FLOOR
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STAMFORD, CT 06901-2682
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