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Total properties:
12
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Patent #:
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Issue Dt:
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05/31/1994
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Application #:
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07928906
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Filing Dt:
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08/12/1992
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Title:
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BURIED LAYER III-V SEMICONDUCTOR DEVICES WITH IMPURITY INDUCED LAYER DISORDERING
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Patent #:
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Issue Dt:
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12/27/1994
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Application #:
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08174911
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Filing Dt:
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12/29/1993
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Title:
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METHOD FOR PRODUCING P-TYPE IMPURITY INDUCED LAYER DISORDERING
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Patent #:
|
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Issue Dt:
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10/03/1995
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Application #:
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08174912
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Filing Dt:
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12/29/1993
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Title:
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SEMICONDUCTOR DEVICES INCORPORATING P-TYPE AND N-TYPE IMPURITY INDUCED LAYER DISORDERED MATERIAL
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Patent #:
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Issue Dt:
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04/16/1996
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Application #:
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08345100
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Filing Dt:
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11/28/1994
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Title:
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DIODE LASER WITH TUNNEL BARRIER LAYER
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Patent #:
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Issue Dt:
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03/04/1997
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Application #:
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08496752
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Filing Dt:
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06/29/1995
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Title:
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SEMICONDUCTOR DEVICES INCORPORATING P-TYPE AND N-TYPE IMPURITY INDUCED LAYER DISORDERED MATERIAL
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Patent #:
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Issue Dt:
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11/12/1996
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Application #:
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08496753
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Filing Dt:
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06/29/1995
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Title:
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SEMICONDUCTOR DEVICES INCORPORATING P-TYPE AND N-TYPE IMPURITY INDUCED LAYER DISORDERED MATERIAL
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|
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Patent #:
|
|
Issue Dt:
|
12/14/1999
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Application #:
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08724620
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Filing Dt:
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09/30/1996
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Title:
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INTEGRATED OPTOELECTRONIC STRUCTURES INCORPORATING P-TYPE AND N-TYPE LAYER DISORDERED REGIONS
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|
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Patent #:
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Issue Dt:
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12/19/2000
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Application #:
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09082154
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Filing Dt:
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05/21/1998
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Title:
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FABRICATION OF GROUP III-V NITRIDES ON MESAS
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|
|
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Patent #:
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|
Issue Dt:
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05/16/2000
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Application #:
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09083137
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Filing Dt:
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05/22/1998
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Title:
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FORMATION OF GROUP III-V NITRIDE FILMS ON SAPPHIRE SUBSTRATES WITH REDUCED DISLOCATION DENSITIES
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|
|
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Patent #:
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Issue Dt:
|
05/13/2003
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Application #:
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09648187
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Filing Dt:
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08/23/2000
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Title:
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STRUCTURE AND METHOD FOR SEPARATION AND TRANSFER OF SEMICONDUCTOR THIN FILMS ONTO DISSIMILAR SUBSTRATE MATERIALS
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|
|
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Patent #:
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|
Issue Dt:
|
04/30/2002
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Application #:
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09682181
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Filing Dt:
|
08/01/2001
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Title:
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METHODS FOR CLEAVING FACETS IN III-V NITRIDES GROWN ON C-FACE SAPPHIRE SUBSTRATES
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|
|
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Patent #:
|
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Issue Dt:
|
09/30/2003
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Application #:
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10320823
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Filing Dt:
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12/16/2002
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Publication #:
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Pub Dt:
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07/03/2003
| | | | |
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Title:
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STRUCTURE AND METHOD FOR SEPARATION AND TRANSFER OF SEMICONDUCTOR THIN FILMS ONTO DISSIMILAR SUBSTRATE MATERIALS
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