Patent Assignment Details
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| Reel/Frame: | 025091/0669 | |
| Pages: | 9 |
| | Recorded: | 10/05/2010 | | |
| Attorney Dkt #: | 25815.318 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11910609
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Filing Dt:
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06/16/2008
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Publication #:
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Pub Dt:
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10/23/2008
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Title:
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Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element
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Assignees
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| 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU |
| TOKYO, 100-8370, JAPAN |
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| 14-1, SHIBA 4-CHOME, MINATO-KU |
| TOKYO, 108-0014, JAPAN |
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| 14-1, SOTOKANDA 4-CHOME, CHIYODA-KU |
| TOKYO, 101-0021, JAPAN |
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| 321 GONGDAN-DONG |
| GUMI-CITY, GYUNGSANGBUK-DO 730-030, KOREA, REPUBLIC OF |
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| 633-2 GOAN-RI, BAEKAM-MYEON, CHEOIN-GU |
| YONGIN-CITY, GYEONGGI-DO, 449-863, KOREA, REPUBLIC OF |
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Correspondence name and address
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JOHN J. TORRENTE
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COWAN, LIEBOWITZ & LATMAN, P.C.
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1133 AVENUE OF THE AMERICAS
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NEW YORK, NY 10036-6799
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