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Reel/Frame:025096/0365   Pages: 4
Recorded: 10/05/2010
Attorney Dkt #:039.0131
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
12935913
Filing Dt:
10/01/2010
Publication #:
US20110049542
Pub Dt:
03/03/2011
Title:
AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs
Assignors
1
TANAKA, SO
Exec Dt:
09/06/2010
2
MIYAHARA, KENICHI
Exec Dt:
09/06/2010
3
KITABAYASHI, HIROYUKI
Exec Dt:
09/06/2010
4
KATAYAMA, KOJI
Exec Dt:
09/06/2010
5
MORISHITA, TOMONORI
Exec Dt:
09/08/2010
6
MORIWAKE, TATSUYA
Exec Dt:
09/06/2010
Assignee
1
SUMITOMO ELECTRIC INDUSTRIES, LTD.
5-33 KITAHAMA 4-CHOME, CHUO-KU
OSAKA-SHI, JAPAN 541-0041
Correspondence name and address
JUDGE PATENT ASSCOIATES
6-3 NISHITEMMA 4-CHOME, KITA-KU
VERT NAKANOSHIMA KITA, SUITE 503
OSAKA-SHI, 530-0047 JAPAN

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