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Reel/Frame:025590/0689   Pages: 4
Recorded: 01/05/2011
Attorney Dkt #:NAUP1117USA3
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
12985309
Filing Dt:
01/05/2011
Publication #:
Pub Dt:
05/05/2011
Title:
METHOD OF FABRICATING SEMICONDUCTOR DEVICE FOR PREVENTING INFLUENCE CAUSED BY AN OVER-HIGH THERMAL BUDGET OF A SIGE EPITAXY PROCESS
Assignors
1
Exec Dt:
03/03/2007
2
Exec Dt:
03/03/2007
3
Exec Dt:
03/03/2007
4
Exec Dt:
03/03/2007
5
Exec Dt:
03/03/2007
6
Exec Dt:
03/03/2007
7
Exec Dt:
03/03/2007
Assignee
1
NO.3, LI-HSIN ROAD 2, SCIENCE-BASED INDUSTRIAL PARK
HSIN-CHU CITY, TAIWAN
Correspondence name and address
WINSTON HSU
P.O.BOX 506
MERRIFIELD, VA 22116

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