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Patent Assignment Details
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Reel/Frame:025612/0196   Pages: 4
Recorded: 01/10/2011
Attorney Dkt #:4717-34400
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
03/04/2014
Application #:
12946135
Filing Dt:
11/15/2010
Publication #:
Pub Dt:
06/09/2011
Title:
FLASH MEMORY CELL ON SEOI HAVING A SECOND CONTROL GATE BURIED UNDER THE INSULATING LAYER
Assignors
1
Exec Dt:
11/23/2010
2
Exec Dt:
12/07/2010
Assignee
1
PARC TECHNOLOGIQUE DES FONTAINES
F-38190 BERNIN, FRANCE
Correspondence name and address
WINSTON & STRAWN LLP - ALLAN A. FANUCCI
1700 K STREET, N.W.
PATENT DEPARTMENT
WASHINGTON, DC 20006-3817

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