Patent Assignment Details
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| Reel/Frame: | 026683/0724 | |
| Pages: | 3 |
| | Recorded: | 08/02/2011 | | |
| Attorney Dkt #: | HON.103 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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02/07/2012
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Application #:
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12388846
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Filing Dt:
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02/19/2009
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Publication #:
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Pub Dt:
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06/17/2010
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Title:
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NANOCRYSTAL SILICON LAYER STRUCTURES FORMED USING PLASMA DEPOSITION TECHNIQUE, METHODS OF FORMING THE SAME, NONVOLATILE MEMORY DEVICES HAVING THE NANOCRYSTAL SILICON LAYER STRUCTURES, AND METHODS OF FABRICATING THE NONVOLATILE MEMORY DEVICES
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Assignee
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| 300 CHEONCHEON-DONG, JANGAN-GU,SUWON-SI |
| GYEONGGI-DO 440-746, KOREA, REPUBLIC OF |
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Correspondence name and address
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THERESA FRITZ CAMORIANO
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8225 SHELBYVILLE ROAD
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LOUISVILLE, KY 40222
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