Patent Assignment Details
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| Reel/Frame: | 029875/0013 | |
| Pages: | 4 |
| | Recorded: | 02/26/2013 | | |
| Attorney Dkt #: | 920_334 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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05/31/2016
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Application #:
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13806337
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Filing Dt:
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02/26/2013
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Publication #:
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Pub Dt:
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07/04/2013
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Title:
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POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GAN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GAN-BASE SEMICONDUCTOR USING THE SAME
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Assignees
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| 1-1, SHIBAURA 1-CHOME |
| MINATO-KU, TOKYO, JAPAN |
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| 8, SHINSUGITA-CHO, ISOGO-KU |
| YOKOHAMA-SHI, KANAGAWA-KEN, JAPAN |
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Correspondence name and address
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BURR & BROWN
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PO BOX 7068
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SYRACUSE, NY 13261-7068
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