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Total properties:
11
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Patent #:
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Issue Dt:
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10/06/2009
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Application #:
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11299731
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Filing Dt:
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12/13/2005
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Publication #:
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Pub Dt:
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06/22/2006
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Title:
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SEMICONDUCTOR DEVICE HAVING A SILICON LAYER IN A GATE ELECTRODE
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Patent #:
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Issue Dt:
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11/18/2008
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Application #:
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11366433
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Filing Dt:
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03/03/2006
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Publication #:
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Pub Dt:
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09/07/2006
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Title:
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING PLANARIZED INTERLAYER INSULATING FILM
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Patent #:
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Issue Dt:
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12/15/2009
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Application #:
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11372351
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Filing Dt:
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03/10/2006
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Publication #:
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Pub Dt:
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11/09/2006
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Title:
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SEMICONDUCTOR CHIP WITH A POROUS SINGLE CRYSTAL LAYER AND MANUFACTURING METHOD OF THE SAME
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Patent #:
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Issue Dt:
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06/15/2010
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Application #:
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11514934
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Filing Dt:
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09/05/2006
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Publication #:
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Pub Dt:
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03/08/2007
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Title:
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METHOD FOR CONTROLLING THICKNESS DISTRIBUTION OF A FILM
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Patent #:
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Issue Dt:
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11/17/2009
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Application #:
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11598644
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Filing Dt:
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11/14/2006
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Publication #:
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Pub Dt:
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05/15/2008
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Title:
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MANUFACTURING METHOD FOR INCREASING PRODUCT YIELD OF MEMORY DEVICES SUFFERING FROM SOURCE/DRAIN JUNCTION LEAKAGE
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Patent #:
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Issue Dt:
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09/22/2009
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Application #:
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11833894
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Filing Dt:
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08/03/2007
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Publication #:
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Pub Dt:
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02/07/2008
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Title:
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METHOD FOR FORMING A NITROGEN-CONTAINING GATE INSULATING FILM
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Patent #:
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Issue Dt:
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07/28/2009
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Application #:
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11870045
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Filing Dt:
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10/10/2007
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Publication #:
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Pub Dt:
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04/17/2008
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Title:
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METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING INTERCONNECTIONS HAVING A SMALLER WIDTH
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Patent #:
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Issue Dt:
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07/26/2011
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Application #:
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11928459
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Filing Dt:
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10/30/2007
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Publication #:
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Pub Dt:
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05/29/2008
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Title:
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CALIBRATION CIRCUIT
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Patent #:
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Issue Dt:
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07/21/2009
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Application #:
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12071971
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Filing Dt:
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02/28/2008
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Publication #:
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Pub Dt:
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09/04/2008
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Title:
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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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06/08/2010
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Application #:
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12213624
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Filing Dt:
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06/23/2008
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Publication #:
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Pub Dt:
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10/30/2008
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Title:
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SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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01/25/2011
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Application #:
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12453737
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Filing Dt:
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05/20/2009
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Publication #:
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Pub Dt:
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09/17/2009
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Title:
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SEMICONDUCTOR DEVICE HAVING SILICON LAYER IN A GATE ELECTRODE
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